GaN substrate Chinese LED companies and foreign manufacturers start at the same time

At present, the substrate materials used for LEDs on the market include sapphire, silicon carbide SiC, silicon Si, zinc oxide ZnO, and gallium nitride GaN. 99% of the substrate materials on the Chinese market are sapphire. Sapphire substrate LED market share also accounted for more than 95%.

However, the LED technology of the sapphire substrate has matured, and the relevant patent network has been closely laid out by the international leading companies, which is very unfavorable to the latecomers. At the same time, in order to reduce costs, the expansion of the size of LED epitaxial wafers based on sapphire substrates (such as 6 inches) also faces a series of technical difficulties. In order to further improve the cost performance of products, many LED manufacturers have begun to develop new technical routes. Many companies such as South Korea ’s Seoul Semiconductor have developed GaN substrate LED homoepitaxial technology, and the United States Puri Optoelectronics, Osram Osram, Korea Sanxing, Japan Toshiba and many other companies are developing silicon substrate GaN-based LED technology.

The several kinds of LED substrate materials introduced above have their own advantages and disadvantages, as shown in the following table:

This time we will focus on the current status of the silicon substrate LED chip industry. There is an enterprise engaged in R & D and production of silicon substrate LEDs in China mainland-Jingneng Optoelectronics Co., Ltd. In order to further understand the performance advantages and market prospects of silicon substrate LEDs, the reporter called Jingneng Optoelectronics on November 26 to invite Sun Qian, vice president of silicon substrate LED technology R & D of Jingneng Optoelectronics (Ph.D. from Yale University, head of the Central Organization Group) Approved by the national "Youth Thousand Talents Project" selected) to give a more detailed introduction.

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